PTF141501EV1

PTF141501, PTF141501EV1

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Description

Parameters

ParameterPTF141501EV1
Manufacturer
Manufacturer
Infineon Technologies
Continuous voltage between drain and source
UDSS
65 V
Continuous drain current
IDSS
1 µA
Technology of field-effect transistor
Technology
LDMOS
Frequency
f
1.5 GHz
Number of elements of the same type in single chip
Elements
MOSFET series
Series
GOLDMOS®
P1dB
P1dB
150 W
Amplification gain (out-to-in ratio)
KdB
16.5 dB