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| Parameter | PTF080101MV1 | PTF080101SV1 | |
|---|---|---|---|
IC package | Package | 10-TSSOP | H32259-2 |
Manufacturer | Manufacturer | Infineon Technologies | |
Continuous voltage between drain and source | UDSS | 65 V | |
Continuous drain current | IDSS | 1 µA | |
Technology of field-effect transistor | Technology | LDMOS | |
Frequency | f | 960 MHz | |
Number of elements of the same type in single chip | Elements | ||
MOSFET series | Series | GOLDMOS® | |
P1dB | P1dB | 10 W | |
Amplification gain (out-to-in ratio) | KdB | 16 dB | 18.5 dB |