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| Parameter | PD57018-E | PD57018S | PD57018S-E | PD57018STR-E | PD57018TR-E | |
|---|---|---|---|---|---|---|
IC package | Package | PowerSO-10 Exposed Bottom Pad, PowerSO-10 Exposed Bottom Pad | PowerSO-10 Exposed Bottom Pad, PowerSO-10 Exposed Bottom Pad | PowerSO-10 Exposed Bottom Pad, PowerSO-10 Exposed Bottom Pad | PowerSO-10 Exposed Bottom Pad, PowerSO-10 Exposed Bottom Pad | PowerSO-10 Exposed Bottom Pad, PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) |
Manufacturer | Manufacturer | STMicroelectronics | ||||
Continuous voltage between drain and source | UDSS | 65 V | ||||
Continuous drain current | IDSS | 2.5 A | ||||
Technology of field-effect transistor | Technology | LDMOS | ||||
Frequency | f | 945 MHz | ||||
Number of elements of the same type in single chip | Elements | |||||
P1dB | P1dB | 18 W | ||||
Amplification gain (out-to-in ratio) | KdB | 16.5 dB | ||||