PD57002S-E

PD57002, PD57002-E, PD57002S-E

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Description

Parameters

ParameterPD57002-EPD57002S-E
IC package
Package
PowerSO-10 Exposed Bottom Pad
Manufacturer
Manufacturer
STMicroelectronics
Continuous voltage between drain and source
UDSS
65 V
Continuous drain current
IDSS
250 mA
Technology of field-effect transistor
Technology
LDMOS
Frequency
f
960 MHz
Number of elements of the same type in single chip
Elements
P1dB
P1dB
2 W
Amplification gain (out-to-in ratio)
KdB
15 dB