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| Parameter | PD54008-E | PD54008L-E | PD54008S-E | PD54008TR-E | |
|---|---|---|---|---|---|
IC package | Package | PowerSO-10 Exposed Bottom Pad, PowerSO-10 Exposed Bottom Pad | PowerSO-10 Exposed Bottom Pad, PowerFLAT™ (5 x 5) | PowerSO-10 Exposed Bottom Pad, PowerSO-10 Exposed Bottom Pad | PowerSO-10 Exposed Bottom Pad, PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) |
Manufacturer | Manufacturer | STMicroelectronics | |||
Continuous voltage between drain and source | UDSS | 25 V | |||
Continuous drain current | IDSS | 5 A | |||
Technology of field-effect transistor | Technology | LDMOS | |||
Frequency | f | 500 MHz | |||
Number of elements of the same type in single chip | Elements | ||||
P1dB | P1dB | 8 W | |||
Amplification gain (out-to-in ratio) | KdB | 11.5 dB | 15 dB | 11.5 dB | 11.5 dB |