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| Parameter | PD20015C | PD20015-E | PD20015S-E | |
|---|---|---|---|---|
IC package | Package | M243 | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | PowerSO-10 Exposed Bottom Pad |
Manufacturer | Manufacturer | STMicroelectronics | ||
Continuous voltage between drain and source | UDSS | 40 V | ||
Continuous drain current | IDSS | 7 A | ||
Technology of field-effect transistor | Technology | LDMOS | ||
Frequency | f | 2 GHz | ||
Number of elements of the same type in single chip | Elements | |||
P1dB | P1dB | 15 W | ||
Amplification gain (out-to-in ratio) | KdB | 11 dB | ||