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| Parameter | NE6510179A-A | NE6510179A-T1-A | |
|---|---|---|---|
IC package | Package | 79A | |
Manufacturer | Manufacturer | NEC | |
Continuous voltage between drain and source | UDSS | 8 V | |
Continuous drain current | IDSS | 2.8 A | |
Technology of field-effect transistor | Technology | HFET | |
Frequency | f | 1.9 GHz | |
Number of elements of the same type in single chip | Elements | ||
Amplification gain (out-to-in ratio) | KdB | 10 dB | |