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| Parameter | NE650103M-A | |
|---|---|---|
IC package | Package | 3M |
Manufacturer | Manufacturer | NEC |
Continuous voltage between drain and source | UDSS | 15 V |
Continuous drain current | IDSS | 5 A |
Technology of field-effect transistor | Technology | MESFET |
Frequency | f | 2.3 GHz |
Number of elements of the same type in single chip | Elements | |
Amplification gain (out-to-in ratio) | KdB | 11 dB |