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| Parameter | NE3514S02-A | NE3514S02-T1C-A | NE3514S02-T1D-A | |
|---|---|---|---|---|
IC package | Package | S02 | ||
Manufacturer | Manufacturer | NEC | ||
Noise factor | NF | 750 mdB | ||
Continuous voltage between drain and source | UDSS | 4 V | ||
Continuous drain current | IDSS | 70 mA | ||
Technology of field-effect transistor | Technology | HFET | ||
Frequency | f | 20 GHz | ||
Number of elements of the same type in single chip | Elements | |||
Amplification gain (out-to-in ratio) | KdB | 10 dB | ||