This page is planned to add content in the near future.
Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address
| Parameter | NE3511S02-A | |
|---|---|---|
IC package | Package | S02 |
Manufacturer | Manufacturer | NEC |
Noise factor | NF | 300 mdB |
Continuous voltage between drain and source | UDSS | 4 V |
Continuous drain current | IDSS | 70 mA |
Technology of field-effect transistor | Technology | HFET |
Frequency | f | 12 GHz |
Number of elements of the same type in single chip | Elements | |
Amplification gain (out-to-in ratio) | KdB | 13.5 dB |