NE3509M04-A

NE3509, NE3509M04-A, NE3509M04-T2-A

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Description

Parameters

ParameterNE3509M04-ANE3509M04-T2-A
IC package
Package
S-Mini 4PSC-70-4, SC-82-4, SOT-323-4, SOT-343
Manufacturer
Manufacturer
NEC
Noise factor
NF
400 mdB
Continuous voltage between drain and source
UDSS
4 V
Continuous drain current
IDSS
60 mA
Technology of field-effect transistor
Technology
HFET
Frequency
f
2 GHz
Number of elements of the same type in single chip
Elements
Amplification gain (out-to-in ratio)
KdB
17.5 dB