NE3508M04-A

NE3508, NE3508M04-A, NE3508M04-T2-A

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterNE3508M04-ANE3508M04-T2-A
IC package
Package
S-Mini 4PSC-70-4, SC-82-4, SOT-323-4, SOT-343
Manufacturer
Manufacturer
NEC
Noise factor
NF
450 mdB
Continuous voltage between drain and source
UDSS
4 V
Continuous drain current
IDSS
120 mA
Technology of field-effect transistor
Technology
HFET
Frequency
f
2 GHz
Number of elements of the same type in single chip
Elements
Amplification gain (out-to-in ratio)
KdB
14 dB