MRFG35030R5

MRFG35030R5

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Description

Parameters

ParameterMRFG35030R5
IC package
Package
HF-600
Manufacturer
Manufacturer
Freescale Semiconductor
Continuous voltage between drain and source
UDSS
15 V
Technology of field-effect transistor
Technology
pHEMT FET
Frequency
f
3.55 GHz
Number of elements of the same type in single chip
Elements
P1dB
P1dB
30 W
Amplification gain (out-to-in ratio)
KdB
12 dB