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| Parameter | MRFG35010R5 | |
|---|---|---|
IC package | Package | NI-360HF |
Manufacturer | Manufacturer | Freescale Semiconductor |
Continuous voltage between drain and source | UDSS | 15 V |
Continuous drain current | IDSS | 2.9 A |
Technology of field-effect transistor | Technology | pHEMT FET |
Frequency | f | 3.55 GHz |
Number of elements of the same type in single chip | Elements | |
P1dB | P1dB | 10 W |
Amplification gain (out-to-in ratio) | KdB | 10 dB |