MRFE6S9160HR5

MRFE6S9160, MRFE6S9160HR3, MRFE6S9160HR5, MRFE6S9160HSR3, MRFE6S9160HSR5

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Description

Parameters

ParameterMRFE6S9160HR3MRFE6S9160HR5MRFE6S9160HSR3MRFE6S9160HSR5
IC package
Package
NI-780NI-780NI-780SNI-780S
Manufacturer
Manufacturer
Freescale Semiconductor
Continuous voltage between drain and source
UDSS
66 V
Continuous drain current
IDSS
10 µA
Technology of field-effect transistor
Technology
MOSFET
FET channel type
Channel
N-ch
Frequency
f
880 MHz
Number of elements of the same type in single chip
Elements
P1dB
P1dB
35 W
Amplification gain (out-to-in ratio)
KdB
21 dB