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| Parameter | MRF7S35120HSR3 | MRF7S35120HSR5 | |
|---|---|---|---|
IC package | Package | NI-780S | |
Manufacturer | Manufacturer | Freescale Semiconductor | |
Continuous voltage between drain and source | UDSS | 65 V | |
Continuous drain current | IDSS | 10 µA | |
Technology of field-effect transistor | Technology | MOSFET | |
FET channel type | Channel | N-ch | |
Frequency | f | 3.1 GHz | |
Number of elements of the same type in single chip | Elements | ||
P1dB | P1dB | 120 W | |
Amplification gain (out-to-in ratio) | KdB | 12 dB | |