MRF7S19100

MRF7S19100, MRF7S19100NBR1, MRF7S19100NR1

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Description

Parameters

ParameterMRF7S19100NBR1MRF7S19100NR1
IC package
Package
TO-272-4TO-270-4
Manufacturer
Manufacturer
Freescale Semiconductor
Continuous voltage between drain and source
UDSS
65 V
Continuous drain current
IDSS
10 µA
Technology of field-effect transistor
Technology
MOSFET
FET channel type
Channel
N-ch
Frequency
f
1.93 GHz
Number of elements of the same type in single chip
Elements
P1dB
P1dB
29 W
Amplification gain (out-to-in ratio)
KdB
17.5 dB