MRF6VP2600HR5

MRF6VP2600, MRF6VP2600HR5, MRF6VP2600HR6

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Description

Parameters

ParameterMRF6VP2600HR5MRF6VP2600HR6
IC package
Package
NI-1230
Manufacturer
Manufacturer
Freescale Semiconductor
Continuous voltage between drain and source
UDSS
110 V
Continuous drain current
IDSS
2.5 mA
Technology of field-effect transistor
Technology
MOSFET
FET channel type
Channel
N-ch
Frequency
f
225 MHz
Number of elements of the same type in single chip
Elements
2
P1dB
P1dB
125 W
Amplification gain (out-to-in ratio)
KdB
25 dB