MRF6V2010GNR1

MRF6V2010, MRF6V2010GNR1, MRF6V2010GNR5, MRF6V2010NBR1, MRF6V2010NBR5, MRF6V2010NR1

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Description

Parameters

ParameterMRF6V2010GNR1MRF6V2010GNR5MRF6V2010NBR1MRF6V2010NBR5MRF6V2010NR1
IC package
Package
TO-270-2TO-270-2TO-272-2TO-272-2TO-270-2
Manufacturer
Manufacturer
Freescale Semiconductor
Continuous voltage between drain and source
UDSS
(not set)(not set)110 V110 V110 V
Continuous drain current
IDSS
(not set)(not set)2.5 mA2.5 mA2.5 mA
Technology of field-effect transistor
Technology
MOSFET
FET channel type
Channel
N-ch
Frequency
f
(not set)(not set)220 MHz220 MHz220 MHz
Number of elements of the same type in single chip
Elements
P1dB
P1dB
10 W
Amplification gain (out-to-in ratio)
KdB
(not set)(not set)23.9 dB23.9 dB23.9 dB