MRF6V12250

MRF6V12250, MRF6V12250HR3, MRF6V12250HR5, MRF6V12250HSR3, MRF6V12250HSR5

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Description

Parameters

ParameterMRF6V12250HR3MRF6V12250HR5MRF6V12250HSR3MRF6V12250HSR5
IC package
Package
NI-780NI-780NI-780SNI-780S
Manufacturer
Manufacturer
Freescale Semiconductor
Continuous voltage between drain and source
UDSS
100 V
Continuous drain current
IDSS
10 µA
Technology of field-effect transistor
Technology
MOSFET
FET channel type
Channel
N-ch
Frequency
f
1.03 GHz
Number of elements of the same type in single chip
Elements
P1dB
P1dB
275 W
Amplification gain (out-to-in ratio)
KdB
20.3 dB