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| Parameter | MRF6V10010NR4 | |
|---|---|---|
IC package | Package | PLD-1.5 |
Manufacturer | Manufacturer | Freescale Semiconductor |
Continuous voltage between drain and source | UDSS | 100 V |
Continuous drain current | IDSS | 2.5 mA |
Technology of field-effect transistor | Technology | MOSFET |
FET channel type | Channel | N-ch |
Frequency | f | 1.09 GHz |
Number of elements of the same type in single chip | Elements | |
P1dB | P1dB | 10 W |
Amplification gain (out-to-in ratio) | KdB | 25 dB |