MRF6S9160HR3

MRF6S9160, MRF6S9160HR3, MRF6S9160HR5, MRF6S9160HSR3, MRF6S9160HSR5

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Description

Parameters

Parameter		MRF6S9160HR3	MRF6S9160HR5	MRF6S9160HSR3	MRF6S9160HSR5
IC package	Package	NI-780	NI-780	NI-780S	NI-780S
Manufacturer	Manufacturer	Freescale Semiconductor
Continuous voltage between drain and source	U_DSS	68 V
Continuous drain current	I_DSS	10 µA
Technology of field-effect transistor	Technology	MOSFET
FET channel type	Channel	N-ch
Frequency	f	880 MHz
Number of elements of the same type in single chip	Elements
P1dB	P1dB	35 W
Amplification gain (out-to-in ratio)	KdB	20.9 dB