MRF6S21100

MRF6S21100, MRF6S21100HR3, MRF6S21100HR5, MRF6S21100HSR3, MRF6S21100HSR5, MRF6S21100MBR1, MRF6S21100MR1, MRF6S21100NBR1, MRF6S21100NR1

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Description

Parameters

Parameter		MRF6S21100HR3	MRF6S21100HR5	MRF6S21100HSR3	MRF6S21100HSR5	MRF6S21100MBR1	MRF6S21100MR1	MRF6S21100NBR1	MRF6S21100NR1
IC package	Package	NI-780	NI-780	NI-780S	NI-780S	TO-272-4	TO-270-4	TO-272-4	TO-270-4
Manufacturer	Manufacturer	Freescale Semiconductor
Continuous voltage between drain and source	U_DSS	68 V
Continuous drain current	I_DSS	10 µA
Technology of field-effect transistor	Technology	MOSFET
FET channel type	Channel	N-ch
Frequency	f	2.11 GHz
Number of elements of the same type in single chip	Elements
P1dB	P1dB	23 W
Amplification gain (out-to-in ratio)	KdB	15.9 dB	15.9 dB	15.9 dB	15.9 dB	14.5 dB	14.5 dB	14.5 dB	14.5 dB