MRF6S21060MBR1

MRF6S21060, MRF6S21060MBR1, MRF6S21060MR1, MRF6S21060NBR1, MRF6S21060NR1

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Description

Parameters

Parameter		MRF6S21060MBR1	MRF6S21060MR1	MRF6S21060NBR1	MRF6S21060NR1
IC package	Package	TO-272-4	TO-270-4	TO-272-4	TO-270-4
Manufacturer	Manufacturer	Freescale Semiconductor
Continuous voltage between drain and source	U_DSS	68 V
Continuous drain current	I_DSS	10 µA
Technology of field-effect transistor	Technology	MOSFET
FET channel type	Channel	N-ch
Frequency	f	2.11 GHz
Number of elements of the same type in single chip	Elements
P1dB	P1dB	14 W
Amplification gain (out-to-in ratio)	KdB	15.5 dB