MRF6S20010

MRF6S20010, MRF6S20010GNR1, MRF6S20010NR1

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Description

Parameters

ParameterMRF6S20010GNR1MRF6S20010NR1
IC package
Package
TO-270-2 Gull WingTO-270-2
Manufacturer
Manufacturer
Freescale Semiconductor
Continuous voltage between drain and source
UDSS
68 V
Continuous drain current
IDSS
10 µA
Technology of field-effect transistor
Technology
MOSFET
FET channel type
Channel
N-ch
Frequency
f
2.17 GHz
Number of elements of the same type in single chip
Elements
P1dB
P1dB
10 W
Amplification gain (out-to-in ratio)
KdB
15.5 dB