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| Parameter | MRF6S19200HR3 | MRF6S19200HR5 | MRF6S19200HSR3 | MRF6S19200HSR5 | |
|---|---|---|---|---|---|
IC package | Package | NI-780 | NI-780 | NI-780S | NI-780S |
Manufacturer | Manufacturer | Freescale Semiconductor | |||
Continuous voltage between drain and source | UDSS | 66 V | |||
Continuous drain current | IDSS | 10 µA | |||
Technology of field-effect transistor | Technology | MOSFET | |||
FET channel type | Channel | N-ch | |||
Frequency | f | 1.93 GHz | |||
Number of elements of the same type in single chip | Elements | ||||
Amplification gain (out-to-in ratio) | KdB | 17.9 dB | |||