MRF6S19100HR3

MRF6S19100, MRF6S19100GNR1, MRF6S19100HR3, MRF6S19100HR5, MRF6S19100HSR3, MRF6S19100HSR5, MRF6S19100MBR1, MRF6S19100MR1, MRF6S19100NBR1, MRF6S19100NR1

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Description

Parameters

ParameterMRF6S19100GNR1MRF6S19100HR3MRF6S19100HR5MRF6S19100HSR3MRF6S19100HSR5MRF6S19100MBR1MRF6S19100MR1MRF6S19100NBR1MRF6S19100NR1
IC package
Package
TO-270-2 Gull WingNI-780NI-780NI-780SNI-780STO-272-4TO-270-4TO-272-4TO-270-4
Manufacturer
Manufacturer
Freescale Semiconductor
Continuous voltage between drain and source
UDSS
(not set)68 V68 V68 V68 V68 V68 V68 V68 V
Continuous drain current
IDSS
(not set)10 µA10 µA10 µA10 µA10 µA10 µA10 µA10 µA
Technology of field-effect transistor
Technology
MOSFET
FET channel type
Channel
N-ch
Frequency
f
(not set)1.99 GHz1.99 GHz1.99 GHz1.99 GHz1.99 GHz1.99 GHz1.99 GHz1.99 GHz
Number of elements of the same type in single chip
Elements
P1dB
P1dB
(not set)22 W22 W22 W22 W22 W22 W22 W22 W
Amplification gain (out-to-in ratio)
KdB
(not set)16.1 dB16.1 dB16.1 dB16.1 dB14.5 dB14.5 dB14.5 dB14.5 dB