MRF6S18100NR1

MRF6S18100, MRF6S18100NBR1, MRF6S18100NR1

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Description

Parameters

ParameterMRF6S18100NBR1MRF6S18100NR1
IC package
Package
TO-272-4TO-270-4
Manufacturer
Manufacturer
Freescale Semiconductor
Continuous voltage between drain and source
UDSS
68 V
Continuous drain current
IDSS
10 µA
Technology of field-effect transistor
Technology
MOSFET
FET channel type
Channel
N-ch
Frequency
f
1.99 GHz
Number of elements of the same type in single chip
Elements
P1dB
P1dB
100 W
Amplification gain (out-to-in ratio)
KdB
14.5 dB