MRF6P21190HR6

MRF6P21190, MRF6P21190HR5, MRF6P21190HR6

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Description

Parameters

ParameterMRF6P21190HR5MRF6P21190HR6
IC package
Package
NI-1230
Manufacturer
Manufacturer
Freescale Semiconductor
Continuous voltage between drain and source
UDSS
68 V
Continuous drain current
IDSS
10 µA
Technology of field-effect transistor
Technology
MOSFET
FET channel type
Channel
N-ch
Frequency
f
2.11 GHz
Number of elements of the same type in single chip
Elements
P1dB
P1dB
44 W
Amplification gain (out-to-in ratio)
KdB
15.5 dB