MRF5S21100HR3

MRF5S21100, MRF5S21100HR3, MRF5S21100HR5, MRF5S21100HSR3, MRF5S21100HSR5

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Description

Parameters

ParameterMRF5S21100HR3MRF5S21100HR5MRF5S21100HSR3MRF5S21100HSR5
IC package
Package
NI-780NI-780NI-780SNI-780S
Manufacturer
Manufacturer
Freescale Semiconductor
Continuous voltage between drain and source
UDSS
65 V
Continuous drain current
IDSS
10 µA
Technology of field-effect transistor
Technology
MOSFET
FET channel type
Channel
N-ch
Frequency
f
2.11 GHz
Number of elements of the same type in single chip
Elements
P1dB
P1dB
23 W
Amplification gain (out-to-in ratio)
KdB
13.5 dB