MMH3111NT1

MMH3111, MMH3111NT1

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Description

Parameters

ParameterMMH3111NT1
IC package
Package
SOT-89-3, TO-243-3
Manufacturer
Manufacturer
Freescale Semiconductor
Noise factor
NF
3.2 dB
Continuous voltage between drain and source
UDSS
6 V
Continuous drain current
IDSS
300 mA
Technology of field-effect transistor
Technology
HFET
FET channel type
Channel
N-ch
Frequency
f
900 MHz
Number of elements of the same type in single chip
Elements
Amplification gain (out-to-in ratio)
KdB
12 dB