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| Parameter | MMBFJ309LT1 | MMBFJ309LT1G | |
|---|---|---|---|
IC package | Package | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | |
Manufacturer | Manufacturer | ON Semiconductor | |
Noise factor | NF | 3 dB | |
Continuous voltage between drain and source | UDSS | 25 V | |
Continuous drain current | IDSS | 30 mA | |
Technology of field-effect transistor | Technology | JFET | |
FET channel type | Channel | N-ch | |
Frequency | f | 450 MHz | |
Number of elements of the same type in single chip | Elements | ||
Amplification gain (out-to-in ratio) | KdB | 12 dB | |