CGH40120F

CGH40120, CGH40120F

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Description

Parameters

ParameterCGH40120F
IC package
Package
440193
Manufacturer
Manufacturer
Cree Inc
Continuous voltage between drain and source
UDSS
84 V
Continuous drain current
IDSS
28 A
Technology of field-effect transistor
Technology
HEMT
FET channel type
Channel
N-ch
Frequency
f
1.3 GHz
Number of elements of the same type in single chip
Elements
P1dB
P1dB
120 W
Amplification gain (out-to-in ratio)
KdB
19 dB