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| Parameter | BLS6G3135-120,112 | BLS6G3135-20,112 | |
|---|---|---|---|
IC package | Package | 2-LDMOST, SOT502A | SOT-608A |
Manufacturer | Manufacturer | NXP Semiconductors | |
Continuous voltage between drain and source | UDSS | 60 V | |
Continuous drain current | IDSS | 7.2 A | 2.1 A |
Technology of field-effect transistor | Technology | LDMOS | |
FET channel type | Channel | N-ch | |
Frequency | f | 3.1 GHz ~ 3.5 GHz | |
Number of elements of the same type in single chip | Elements | ||
P1dB | P1dB | 130 W | 20 W |
Amplification gain (out-to-in ratio) | KdB | 11 dB | 15.5 dB |