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| Parameter | BLS6G2731-120,112 | BLS6G2731-6G,112 | BLS6G2731S-120,112 | |
|---|---|---|---|---|
IC package | Package | 2-LDMOST, SOT502A | 3-LDMOST, SOT957C | 2-LDMOST, SOT502B |
Manufacturer | Manufacturer | NXP Semiconductors | ||
Continuous voltage between drain and source | UDSS | 60 V | ||
Continuous drain current | IDSS | 33 A | 3.5 A | 33 A |
Technology of field-effect transistor | Technology | LDMOS | ||
FET channel type | Channel | N-ch | ||
Frequency | f | 2.7 GHz ~ 3.1 GHz | ||
Number of elements of the same type in single chip | Elements | |||
P1dB | P1dB | 120 W | 6 W | 120 W |
Amplification gain (out-to-in ratio) | KdB | 13.5 dB | 15 dB | 13.5 dB |