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| Parameter | BLF6G38-100,112 | BLF6G38-10,112 | BLF6G38-10,118 | BLF6G38-10G,112 | BLF6G38-10G,118 | BLF6G38-25,112 | BLF6G38-50,112 | BLF6G38LS-100,112 | BLF6G38LS-50,112 | BLF6G38S-25,112 | |
|---|---|---|---|---|---|---|---|---|---|---|---|
IC package | Package | 2-LDMOST, SOT502A | 2-LDMOST, SOT957A | 2-LDMOST, SOT957A | 2-LDMOST, SOT957A | 2-LDMOST, SOT957A | SOT-608A | 2-LDMOST, SOT502A | 2-LDMOST, SOT502B | 2-LDMOST, SOT502B | SOT-608B |
Manufacturer | Manufacturer | NXP Semiconductors | |||||||||
Continuous voltage between drain and source | UDSS | 65 V | |||||||||
Continuous drain current | IDSS | 34 A | 3.1 A | 3.1 A | 3.1 A | 3.1 A | 8.2 A | 16.5 A | 34 A | 16.5 A | 8.2 A |
Technology of field-effect transistor | Technology | LDMOS | |||||||||
FET channel type | Channel | N-ch | |||||||||
Frequency | f | 3.4 GHz | |||||||||
Number of elements of the same type in single chip | Elements | ||||||||||
P1dB | P1dB | 18.5 W | 2 W | 2 W | 2 W | 2 W | 4.5 W | 9 W | 18.5 W | 9 W | 4.5 W |
Amplification gain (out-to-in ratio) | KdB | 13 dB | 14 dB | 14 dB | 14 dB | 14 dB | 15 dB | 14 dB | 13 dB | 14 dB | 15 dB |