BLF6G27-10G,112

BLF6G27, BLF6G27-10,112, BLF6G27-10G,112, BLF6G27-135,112, BLF6G27-45,112, BLF6G27-75,112, BLF6G27LS-135,112, BLF6G27LS-135,118, BLF6G27LS-75,112, BLF6G27LS-75,118, BLF6G27S-45,112

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Description

Parameters

Parameter		BLF6G27-10,112	BLF6G27-10G,112	BLF6G27-135,112	BLF6G27-45,112	BLF6G27-75,112	BLF6G27LS-135,112	BLF6G27LS-135,118	BLF6G27LS-75,112	BLF6G27LS-75,118	BLF6G27S-45,112
IC package	Package	2-LDMOST, SOT957A	2-LDMOST, SOT957A	2-LDMOST, SOT502A	SOT-608A	2-LDMOST, SOT502A	2-LDMOST, SOT502B	2-LDMOST, SOT502B	2-LDMOST, SOT502B	2-LDMOST, SOT502B	SOT-608B
Manufacturer	Manufacturer	NXP Semiconductors
Continuous voltage between drain and source	U_DSS	65 V
Continuous drain current	I_DSS	3.5 A	3.5 A	34 A	20 A	18 A	34 A	34 A	18 A	18 A	20 A
Technology of field-effect transistor	Technology	LDMOS
FET channel type	Channel	N-ch
Frequency	f	2.5 GHz	2.5 GHz	2.5 GHz	2.7 GHz	2.5 GHz	2.5 GHz	2.5 GHz	2.5 GHz	2.5 GHz	2.7 GHz
Number of elements of the same type in single chip	Elements
P1dB	P1dB	2 W	2 W	20 W	7 W	9 W	20 W	20 W	9 W	9 W	7 W
Amplification gain (out-to-in ratio)	KdB	19 dB	19 dB	16 dB	18 dB	17 dB	16 dB	16 dB	17 dB	17 dB	18 dB