BLF6G22-180RN,112

BLF6G22, BLF6G22-180PN,112, BLF6G22-180RN,112, BLF6G22-45,112, BLF6G22-45,135, BLF6G22LS-100,112, BLF6G22LS-100,118, BLF6G22LS-130,112, BLF6G22LS-130,118, BLF6G22LS-180RN:11, BLF6G22LS-75,112, BLF6G22LS-75,118

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Description

Parameters

Parameter		BLF6G22-180PN,112	BLF6G22-180RN,112	BLF6G22-45,112	BLF6G22-45,135	BLF6G22LS-100,112	BLF6G22LS-100,118	BLF6G22LS-130,112	BLF6G22LS-130,118	BLF6G22LS-180RN:11	BLF6G22LS-75,112	BLF6G22LS-75,118
IC package	Package	5-LDMOST	2-LDMOST, SOT502A	SOT-608A	SOT-608A	2-LDMOST, SOT502B	2-LDMOST, SOT502B	2-LDMOST, SOT502B	2-LDMOST, SOT502B	2-LDMOST, SOT502B	2-LDMOST, SOT502B	2-LDMOST, SOT502B
Manufacturer	Manufacturer	NXP Semiconductors
Continuous voltage between drain and source	U_DSS	65 V
Continuous drain current	I_DSS	5 µA	49 A	1.5 µA	1.5 µA	29 A	29 A	34 A	34 A	49 A	18 A	18 A
Technology of field-effect transistor	Technology	LDMOS
FET channel type	Channel	N-ch
Frequency	f	2.11 GHz
Number of elements of the same type in single chip	Elements
P1dB	P1dB	50 W	40 W	2.5 W	2.5 W	25 W	25 W	30 W	30 W	40 W	17 W	17 W
Amplification gain (out-to-in ratio)	KdB	17.5 dB	16 dB	18.5 dB	18.5 dB	18.5 dB	18.5 dB	17 dB	17 dB	16 dB	18.7 dB	18.7 dB