BLF6G20-110,112

BLF6G20, BLF6G20-110,112, BLF6G20-180PN,112, BLF6G20-230P, BLF6G20-45,112, BLF6G20-45,135, BLF6G20LS-110,112, BLF6G20LS-110,118, BLF6G20LS-140,112, BLF6G20LS-140,118, BLF6G20LS-75,112, BLF6G20LS-75,118, BLF6G20S-45,112

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Description

Parameters

Parameter		BLF6G20-110,112	BLF6G20-180PN,112	BLF6G20-230P	BLF6G20-45,112	BLF6G20-45,135	BLF6G20LS-110,112	BLF6G20LS-110,118	BLF6G20LS-140,112	BLF6G20LS-140,118	BLF6G20LS-75,112	BLF6G20LS-75,118	BLF6G20S-45,112
IC package	Package	2-LDMOST, SOT502A	5-LDMOST	2-LDMOST, SOT502A	SOT-608A	SOT-608A	2-LDMOST, SOT502B	2-LDMOST, SOT502B	2-LDMOST, SOT502B	2-LDMOST, SOT502B	2-LDMOST, SOT502B	2-LDMOST, SOT502B	SOT-608A
Manufacturer	Manufacturer	NXP Semiconductors
Continuous voltage between drain and source	U_DSS	65 V
Continuous drain current	I_DSS	29 A	5 µA	5 µA	13 A	13 A	29 A	29 A	39 A	39 A	18 A	18 A	13 A
Technology of field-effect transistor	Technology	LDMOS
FET channel type	Channel	N-ch
Frequency	f	1.93 GHz	1.8 GHz	1.8 GHz	1.8 GHz	1.8 GHz	1.93 GHz	1.93 GHz	1.93 GHz	1.93 GHz	1.93 GHz	1.93 GHz	1.8 GHz
Number of elements of the same type in single chip	Elements
P1dB	P1dB	25 W	50 W	50 W	2.5 W	2.5 W	25 W	25 W	35.5 W	35.5 W	29.5 W	29.5 W	2.5 W
Amplification gain (out-to-in ratio)	KdB	19 dB	18 dB	16.5 dB	19.2 dB	19.2 dB	19 dB	19 dB	16.5 dB	16.5 dB	19 dB	19 dB	19.2 dB