BLF6G10-160RN,112

BLF6G10, BLF6G10-135RN,112, BLF6G10-160RN,112, BLF6G10-200RN,112, BLF6G10-45,112, BLF6G10-45,135, BLF6G10LS-135R,112, BLF6G10LS-135R,118, BLF6G10LS-135RN:11, BLF6G10LS-160,112, BLF6G10LS-160,118, BLF6G10LS-160RN,11, BLF6G10LS-200,112, BLF6G10LS-200,118, BLF6G10LS-200R,112, BLF6G10LS-200R,118, BLF6G10LS-200RN:11, BLF6G10S-45,112

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Description

Parameters

Parameter		BLF6G10-135RN,112	BLF6G10-160RN,112	BLF6G10-200RN,112	BLF6G10-45,112	BLF6G10-45,135	BLF6G10LS-135R,112	BLF6G10LS-135R,118	BLF6G10LS-135RN:11	BLF6G10LS-160,112	BLF6G10LS-160,118	BLF6G10LS-160RN,11	BLF6G10LS-200,112	BLF6G10LS-200,118	BLF6G10LS-200R,112	BLF6G10LS-200R,118	BLF6G10LS-200RN:11	BLF6G10S-45,112
IC package	Package	2-LDMOST, SOT502A	2-LDMOST, SOT502A	2-LDMOST, SOT502A	SOT-608A	SOT-608A	2-LDMOST, SOT502B	2-LDMOST, SOT502B	2-LDMOST, SOT502B	2-LDMOST, SOT502B	2-LDMOST, SOT502B	2-LDMOST, SOT502B	2-LDMOST, SOT502B	2-LDMOST, SOT502B	2-LDMOST, SOT502B	2-LDMOST, SOT502B	2-LDMOST, SOT502B	SOT-608B
Manufacturer	Manufacturer	NXP Semiconductors
Continuous voltage between drain and source	U_DSS	65 V	65 V	65 V	65 V	65 V	65 V	65 V	65 V	(not set)	(not set)	65 V	65 V	65 V	65 V	65 V	65 V	65 V
Continuous drain current	I_DSS	32 A	39 A	49 A	13 A	13 A	32 A	32 A	32 A	(not set)	(not set)	39 A	49 A	49 A	49 A	49 A	49 A	13 A
Technology of field-effect transistor	Technology	LDMOS
FET channel type	Channel	N-ch
Frequency	f	871.5 MHz	922.5 MHz	871.5 MHz	922.5 MHz	922.5 MHz	871.5 MHz	871.5 MHz	871.5 MHz	1 GHz	1 GHz	922.5 MHz	871.5 MHz	871.5 MHz	871.5 MHz	871.5 MHz	871.5 MHz	922.5 MHz
Number of elements of the same type in single chip	Elements
P1dB	P1dB	26.5 W	32 W	40 W	1 W	1 W	26.5 W	26.5 W	26.5 W	(not set)	(not set)	32 W	40 W	40 W	40 W	40 W	40 W	1 W
Amplification gain (out-to-in ratio)	KdB	21 dB	22.5 dB	20 dB	22.5 dB	22.5 dB	21 dB	21 dB	21 dB	28 dB	28 dB	22.5 dB	20.2 dB	20.2 dB	20 dB	20 dB	20 dB	23 dB