BLF6G10

BLF6G10, BLF6G10-135RN,112, BLF6G10-160RN,112, BLF6G10-200RN,112, BLF6G10-45,112, BLF6G10-45,135, BLF6G10LS-135R,112, BLF6G10LS-135R,118, BLF6G10LS-135RN:11, BLF6G10LS-160,112, BLF6G10LS-160,118, BLF6G10LS-160RN,11, BLF6G10LS-200,112, BLF6G10LS-200,118, BLF6G10LS-200R,112, BLF6G10LS-200R,118, BLF6G10LS-200RN:11, BLF6G10S-45,112

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Description

Parameters

ParameterBLF6G10-135RN,112BLF6G10-160RN,112BLF6G10-200RN,112BLF6G10-45,112BLF6G10-45,135BLF6G10LS-135R,112BLF6G10LS-135R,118BLF6G10LS-135RN:11BLF6G10LS-160,112BLF6G10LS-160,118BLF6G10LS-160RN,11BLF6G10LS-200,112BLF6G10LS-200,118BLF6G10LS-200R,112BLF6G10LS-200R,118BLF6G10LS-200RN:11BLF6G10S-45,112
IC package
Package
2-LDMOST, SOT502A2-LDMOST, SOT502A2-LDMOST, SOT502ASOT-608ASOT-608A2-LDMOST, SOT502B2-LDMOST, SOT502B2-LDMOST, SOT502B2-LDMOST, SOT502B2-LDMOST, SOT502B2-LDMOST, SOT502B2-LDMOST, SOT502B2-LDMOST, SOT502B2-LDMOST, SOT502B2-LDMOST, SOT502B2-LDMOST, SOT502BSOT-608B
Manufacturer
Manufacturer
NXP Semiconductors
Continuous voltage between drain and source
UDSS
65 V65 V65 V65 V65 V65 V65 V65 V(not set)(not set)65 V65 V65 V65 V65 V65 V65 V
Continuous drain current
IDSS
32 A39 A49 A13 A13 A32 A32 A32 A(not set)(not set)39 A49 A49 A49 A49 A49 A13 A
Technology of field-effect transistor
Technology
LDMOS
FET channel type
Channel
N-ch
Frequency
f
871.5 MHz922.5 MHz871.5 MHz922.5 MHz922.5 MHz871.5 MHz871.5 MHz871.5 MHz1 GHz1 GHz922.5 MHz871.5 MHz871.5 MHz871.5 MHz871.5 MHz871.5 MHz922.5 MHz
Number of elements of the same type in single chip
Elements
P1dB
P1dB
26.5 W32 W40 W1 W1 W26.5 W26.5 W26.5 W(not set)(not set)32 W40 W40 W40 W40 W40 W1 W
Amplification gain (out-to-in ratio)
KdB
21 dB22.5 dB20 dB22.5 dB22.5 dB21 dB21 dB21 dB28 dB28 dB22.5 dB20.2 dB20.2 dB20 dB20 dB20 dB23 dB