BLF4G20-110B,112

BLF4G20, BLF4G20-110B,112, BLF4G20LS-110B,112, BLF4G20LS-130,112, BLF4G20S-110B,112

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Description

Parameters

Parameter		BLF4G20-110B,112	BLF4G20LS-110B,112	BLF4G20LS-130,112	BLF4G20S-110B,112
IC package	Package	2-LDMOST, SOT502A	2-LDMOST, SOT502B	2-LDMOST, SOT502B	2-LDMOST, SOT502B
Manufacturer	Manufacturer	NXP Semiconductors
Continuous voltage between drain and source	U_DSS	65 V
Continuous drain current	I_DSS	12 A	12 A	15 A	12 A
Technology of field-effect transistor	Technology	LDMOS
FET channel type	Channel	N-ch
Frequency	f	1.93 GHz
Number of elements of the same type in single chip	Elements
P1dB	P1dB	100 W	100 W	130 W	100 W
Amplification gain (out-to-in ratio)	KdB	13.5 dB	13.4 dB	14.6 dB	13.5 dB