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| Parameter | BLF4G10-160,112 | BLF4G10LS-120,112 | BLF4G10LS-160,112 | |
|---|---|---|---|---|
IC package | Package | 2-LDMOST, SOT502A | 2-LDMOST, SOT502B | 2-LDMOST, SOT502B |
Manufacturer | Manufacturer | NXP Semiconductors | ||
Continuous voltage between drain and source | UDSS | 65 V | ||
Continuous drain current | IDSS | 15 A | 12 A | 15 A |
Technology of field-effect transistor | Technology | LDMOS | ||
FET channel type | Channel | N-ch | ||
Frequency | f | 894 MHz | 920 MHz | 894.2 MHz |
Number of elements of the same type in single chip | Elements | |||
P1dB | P1dB | 160 W | 48 W | 160 W |
Amplification gain (out-to-in ratio) | KdB | 19.7 dB | 19 dB | 19.7 dB |