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| Parameter | BLF245,112 | BLF245B,112 | |
|---|---|---|---|
IC package | Package | SOT-123A | SOT-279A |
Manufacturer | Manufacturer | NXP Semiconductors | |
Noise factor | NF | 2 dB | (not set) |
Continuous voltage between drain and source | UDSS | 65 V | |
Continuous drain current | IDSS | 6 A | 4.5 A |
Technology of field-effect transistor | Technology | MOSFET | |
FET channel type | Channel | N-ch | |
Frequency | f | 175 MHz | |
Number of elements of the same type in single chip | Elements | 2 | |
P1dB | P1dB | 30 W | |
Amplification gain (out-to-in ratio) | KdB | 15.5 dB | 18 dB |