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| Parameter | BLF242,112 | |
|---|---|---|
IC package | Package | SOT-123A |
Manufacturer | Manufacturer | NXP Semiconductors |
Continuous voltage between drain and source | UDSS | 65 V |
Continuous drain current | IDSS | 1 A |
Technology of field-effect transistor | Technology | MOSFET |
FET channel type | Channel | N-ch |
Frequency | f | 175 MHz |
Number of elements of the same type in single chip | Elements | |
P1dB | P1dB | 5 W |
Amplification gain (out-to-in ratio) | KdB | 16 dB |