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| Parameter | BLF177,112 | BLF177C,112 | BLF177CR,112 | |
|---|---|---|---|---|
IC package | Package | SOT-121B | ||
Manufacturer | Manufacturer | NXP Semiconductors | ||
Continuous voltage between drain and source | UDSS | 125 V | ||
Continuous drain current | IDSS | 16 A | ||
Technology of field-effect transistor | Technology | MOSFET | ||
FET channel type | Channel | N-ch | ||
Frequency | f | 108 MHz | ||
Number of elements of the same type in single chip | Elements | |||
P1dB | P1dB | 150 W | ||
Amplification gain (out-to-in ratio) | KdB | 19 dB | ||