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| Parameter | BLC6G10LS-160RN | |
|---|---|---|
Manufacturer | Manufacturer | NXP Semiconductors |
Continuous voltage between drain and source | UDSS | 65 V |
Continuous drain current | IDSS | 5 µA |
Technology of field-effect transistor | Technology | LDMOS |
FET channel type | Channel | N-ch |
Frequency | f | 922.5 MHz |
Number of elements of the same type in single chip | Elements | |
P1dB | P1dB | 32 W |
Amplification gain (out-to-in ratio) | KdB | 23 dB |