BG3430RE6327

BG3430, BG3430RE6327

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Description

Parameters

ParameterBG3430RE6327
IC package
Package
SC-70-6, SC-88, SOT-323-6, SOT-363
Manufacturer
Manufacturer
Infineon Technologies
Noise factor
NF
1.3 dB
Continuous voltage between drain and source
UDSS
8 V
Continuous drain current
IDSS
25 mA
Technology of field-effect transistor
Technology
MOSFET
FET channel type
Channel
N-ch
Frequency
f
800 MHz
Number of elements of the same type in single chip
Elements
2
Amplification gain (out-to-in ratio)
KdB
25 dB