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| Parameter | BG3230E6327 | |
|---|---|---|
IC package | Package | SC-70-6, SC-88, SOT-323-6, SOT-363 |
Manufacturer | Manufacturer | Infineon Technologies |
Noise factor | NF | 1.3 dB |
Continuous voltage between drain and source | UDSS | 8 V |
Continuous drain current | IDSS | 25 mA |
Technology of field-effect transistor | Technology | MOSFET |
FET channel type | Channel | N-ch |
Frequency | f | 800 MHz |
Number of elements of the same type in single chip | Elements | 2 |
Amplification gain (out-to-in ratio) | KdB | 24 dB |