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| Parameter | BF998,215 | BF998E6327 | BF998R,215 | BF998RE6327 | BF998WR,115 | |
|---|---|---|---|---|---|---|
IC package | Package | SOT-143, SOT-143B, TO-253AA | SOT-143, SOT-143B, TO-253AA | SOT-143R | SOT-143R | SOT-343R |
Manufacturer | Manufacturer | NXP Semiconductors | Infineon Technologies | NXP Semiconductors | Infineon Technologies | NXP Semiconductors |
Noise factor | NF | 600 mdB | 2.8 dB | 600 mdB | 2.8 dB | 600 mdB |
Continuous voltage between drain and source | UDSS | 12 V | ||||
Continuous drain current | IDSS | 30 mA | ||||
Technology of field-effect transistor | Technology | MOSFET Dual Gate | MOSFET | MOSFET Dual Gate | MOSFET | MOSFET Dual Gate |
FET channel type | Channel | N-ch | ||||
Frequency | f | 200 MHz | 45 MHz | 200 MHz | 45 MHz | 200 MHz |
Number of elements of the same type in single chip | Elements | |||||
Amplification gain (out-to-in ratio) | KdB | (not set) | 28 dB | (not set) | 28 dB | (not set) |